ISL6615A_14 Datasheet, PDF (1/12 Pages) Intersil Corporation – High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features

High-Frequency 6A Sink Synchronous MOSFET Drivers
with Protection Features
ISL6615A
The ISL6615A is a high-speed MOSFET driver optimized to drive
upper and lower power N-Channel MOSFETs in a synchronous
rectified buck converter topology. This driver, combined with an
Intersil Digital or Analog multiphase PWM controller, forms a
complete high frequency and high efficiency voltage regulator.
The ISL6615A drives both upper and lower gates over a range of
4.5V to 13.2V. This drive-voltage provides the flexibility necessary
to optimize applications involving trade-offs between gate charge
and conduction losses.
The ISL6615A features 6A typical sink current for the low-side
gate driver, enhancing the lower MOSFET gate hold-down
capability during PHASE node rising edge, preventing power loss
caused by the self turn-on of the lower MOSFET due to the high
dV/dt of the switching node.
An advanced adaptive zero shoot-through protection is integrated
to prevent both the upper and lower MOSFETs from conducting
simultaneously and to minimize the dead-time. The ISL6615A
includes an overvoltage protection feature operational before
VCC exceeds its turn-on threshold, at which the PHASE node is
connected to the gate of the low side MOSFET (LGATE). The
output voltage of the converter is then limited by the threshold of
the low side MOSFET, which provides some protection to the load
if the upper MOSFET(s) is shorted.
The ISL6615A also features an input that recognizes a
high-impedance state, working together with Intersil multiphase
PWM controllers to prevent negative transients on the controlled
output voltage when operation is suspended. This feature
eliminates the need for the Schottky diode that may be utilized in
a power system to protect the load from negative output voltage
damage.
Features
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- LGATE Detection
- Auto-zero of r_DS(ON) Conduction Offset Effect
• Adjustable Gate Voltage for Optimal Efficiency
• 36V Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 1MHz)
- 6A LGATE Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
• Support 5V PWM Input Logic
• Tri-State PWM Input for Safe Output Stage Shutdown
• Tri-State PWM Input Hysteresis for Applications with Power
Sequencing Requirement
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Expandable Bottom Copper PAD for Better Heat Spreading
• Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB Efficiency
and Thinner in Profile
• Pb-free (RoHS compliant)
Applications
• Optimized for POL DC/DC Converters for IBA Systems
• Core Regulators for Intel® and AMD® Microprocessors
• High Current Low-Profile DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
• Synchronous Rectification for Isolated Power Supplies
Related Literature
• Technical Brief TB363 “Guidelines for Handling and Processing
Moisture Sensitive Surface Mount Devices (SMDs)”
• Technical Brief TB389 “PCB Land Pattern Design and Surface
Mount Guidelines for QFN Packages”
April 13, 2012
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
FN6608.2
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