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ISL55110IVZ-T Datasheet, PDF (1/18 Pages) Intersil Corporation – Dual, High Speed MOSFET Driver
Dual, High Speed MOSFET Driver
ISL55110, ISL55111
The ISL55110 and ISL55111 are dual high speed MOSFET
drivers intended for applications requiring accurate pulse
generation and buffering. Target applications include
ultrasound, CCD imaging, automotive piezoelectric distance
sensing and clock generation circuits.
With a wide output voltage range and low ON-resistance, these
devices can drive a variety of resistive and capacitive loads
with fast rise and fall times, allowing high-speed operation
with low skew, as required in large CCD array imaging
applications.
The ISL55110 and ISL55111 are compatible with 3.3V and 5V
logic families and incorporate tightly controlled input
thresholds to minimize the effect of input rise time on output
pulse width. The ISL55110 has a pair of in-phase drivers while
the ISL55111 has two drivers operating in antiphase.
The ISL55110 and ISL55111 have a power-down mode for low
power consumption during equipment standby times, making
it ideal for portable products.
The ISL55110 and ISL55111 are available in 16 Ld Exposed
pad QFN packaging and 8 Ld TSSOP. Both devices are
specified for operation over the full -40°C to +85°C
temperature range.
Features
• 5V to 12V pulse amplitude
• High current drive 3.5A
• 6ns minimum pulse width
• 1.5ns rise and fall times, 100pF load
• Low skew
• 3.3V and 5V logic compatible
• In-phase (ISL55110) and anti-phase outputs (ISL55111)
• Small QFN and TSSOP packaging
• Low quiescent current
• Pb-Free (RoHS compliant)
Applications
• Ultrasound MOSFET driver
• CCD array horizontal driver
• Automotive piezo driver applications
• Clock driver circuits
Related Literature
• AN1283, “ISL55110_11EVAL1Z, ISL55110_11EVAL2Z
Evaluation Board User's Manual”
Functional Block Diagram
ISL55110 AND ISL55111 DUAL DRIVER
o VDD
VH o
o IN-A
OA o
o
ENABLE-QFN*
o IN-B
**
o PD
OB o
GND o
*ENABLE AVAILABLE IN QFN PACKAGE ONLY
**ISL55111 IN-B IS INVERTING
May 30, 2014
FN6228.7
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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