IRFF9220 Datasheet, PDF (1/7 Pages) Intersil Corporation – -2.5A, -200V, 1.5 Ohm, P-Channel Power MOSFETs

Data Sheet
IRFF9220
July 1998 File Number 2288.2
-2.5A, -200V, 1.5 Ohm, P-Channel Power
MOSFETs
These are advanced power MOSFETs designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. They are P-Channel
enhancement mode silicon gate power field effect transistors
designed for applications such as switching regulators,
switching converters, motor drivers, relay drivers and drivers for
high power bipolar switching transistors requiring high speed
and low gate drive power. These types can be operated directly
from integrated circuits.
Formerly develpomental type TA17502.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFF9220
TO-205AF
IRFF9220
NOTE: When ordering, use the entire part number.
Features
• -2.5A, -200V
• r_DS(ON) = 1.5Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
4-107
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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