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IRFF9120 Datasheet, PDF (1/7 Pages) Intersil Corporation – 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET
Data Sheet
IRFF9120
June 1999 File Number 2287.2
4A, 100V, 0.60 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power
field effect transistor is designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17501.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFF9120
TO-205AF
IRFF9120
NOTE: When ordering, use the entire part number.
Features
• 4A, 100V
• rDS(ON) = 0.60Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
4-94
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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