IRFD310 Datasheet, PDF (1/6 Pages) Intersil Corporation – 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET

Data Sheet
IRFD310
July 1999 File Number 2324.4
0.4A, 400V, 3.600 Ohm, N-Channel
Power MOSFET
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17444.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD310
HEXDIP
IRFD310
NOTE: When ordering, use the entire part number.
Features
• 0.4A, 400V
• r_DS(ON) = 3.600Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
HEXDIP
GATE
DRAIN
SOURCE
4-293
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999