IRF730 Datasheet, PDF (1/7 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated

Data Sheet
IRF730
July 1999 File Number 1580.5
5.5A, 400V, 1.000 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor. It is an advanced power MOSFET
designed, tested, and guaranteed to withstand a specified
level of energy in the breakdown avalanche mode of
operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17414.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF730
TO-220AB
IRF730
NOTE: When ordering, use the entire part number.
Features
• 5.5A, 400V
• r_DS(ON) = 1.000Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
4-232
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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