IRF710 Datasheet, PDF (1/7 Pages) Intersil Corporation – 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET

Data Sheet
IRF710
June 1999 File Number 2310.3
2.0A, 400V, 3.600 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits.
Formerly developmental type TA17444.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF710
TO-220AB
IRF710
NOTE: When ordering, include the entire part number.
Features
• 2.0A, 400V
• r_DS(ON) = 3.600Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
TOP VIEW
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
4-220
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999