IRF350 Datasheet, PDF (1/7 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

Data Sheet
IRF350
March 1999 File Number 1826.3
15A, 400V, 0.300 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
They can be operated directly from integrated circuits.
Formerly developmental type TA9399.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF350
TO-204AA
IRF350
NOTE: When ordering, include the entire part number.
Features
• 15A, 400V
• r_DS(ON) = 0.300Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
TOP VIEW
GATE (PIN 1)
SOURCE (PIN 2)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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