IRF320 Datasheet, PDF (1/7 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

Semiconductor
July 1998
IRF320, IRF321,
IRF322, IRF323
2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm,
N-Channel Power MOSFETs
Features
• 2.8A and 3.3A, 350V and 400V
• r_DS(ON) = 1.8Ω and 2.5Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF320
TO-204AA
IRF320
IRF321
TO-204AA
IRF321
IRF322
TO-204AA
IRF322
IRF323
TO-204AA
IRF323
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17404.
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 1569.3