IRF250 Datasheet, PDF (1/7 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

Data Sheet
IRF250
March 1999 File Number 1825.3
30A, 200V, 0.085 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is designed, tested and guaranteed to
withstand a specified level of energy in the breakdown
avalanche mode of operation. These MOSFETs are
designed for applications such as switching regulators,
switching converters, motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. They can be operated
directly from integrated circuits.
Formerly developmental type TA09295.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF250
TO-204AE
IRF250
NOTE: When ordering, include the entire part number.
Features
• 30A, 200V
• r_DS(ON) = 0.085Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AE
TOP VIEW
GATE (PIN 1)
SOURCE (PIN 2)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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