IRF240 Datasheet, PDF (1/7 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFET

Data Sheet
IRF240
March 1999 File Number 1584.3
18A, 200V, 0.180 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFETs designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17422.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF240
TO-204AE
IRF240
NOTE: When ordering, include the entire part number.
Features
• 18A, 200V
• r_DS(ON) = 0.180Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AE
TOP VIEW
GATE (PIN 1)
SOURCE (PIN 2)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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