IRF220 Datasheet, PDF (1/7 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

Semiconductor
October 1997
IRF220, IRF221,
IRF222, IRF223
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm,
N-Channel Power MOSFETs
Features
• 4.0A and 5.0A, 150V and 200V
• r_DS(ON) = 0.8Ω and 1.2Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF220
TO-204AA
IRF220
IRF221
TO-204AA
IRF221
IRF222
TO-204AA
IRF222
IRF223
TO-204AA
IRF223
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA09600.
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 199&
1
File Number 1567.2