IRF120 Datasheet, PDF (1/7 Pages) Samsung semiconductor – N-CHANNEL POWER MOSFETS

Semiconductor
October 1997
IRF120, IRF121,
IRF122, IRF123
8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm,
N-Channel, Power MOSFETs
Features
• 8.0A and 9.2A, 80V and 100V
• r_DS(ON) = 0.27Ω and 0.36Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF120
TO-204AA
IRF120
IRF121
TO-204AA
IRF121
IRF122
TO-204AA
IRF122
IRF123
TO-204AA
IRF123
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA09594.
Symbol
D
G
S
Packaging
JEDEC TO-204AA
DRAIN
(FLANGE)
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
2-1
File Number 1565.2