HUF76131SK8 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

TM
Data Sheet
HUF76131SK8
June 2000 File Number 4396.5
10A, 30V, 0.013 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
This N-Channel power MOSFET is
® manufactured using the innovative
UltraFET process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA76131.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76131SK8
MS-012AA
76131SK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76131SK8T.
Features
• Logic Level Gate Drive
• 10A, 30V
• Ultra Low On-Resistance, r_DS(ON) = 0.013Ω
• Temperature Compensating PSPICE^® Model
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
SOURCE(1)
DRAIN(8)
SOURCE(2)
DRAIN(7)
SOURCE(3)
DRAIN(6)
GATE(4)
DRAIN(5)
Packaging
JEDEC MS-012AA
BRANDING DASH
5
1
2
3
4
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET® is a registered trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000.