HUF76121P3 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

Data Sheet
HUF76121P3, HUF76121S3S
September 1999 File Number 4392.8
47A, 30V, 0.021 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA76121.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76121P3
TO-220AB
76121P
HUF76121S3S
TO-263AB
76121S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF76121S3ST.
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• Logic Level Gate Drive
• 47A, 30V
• Ultra Low On-Resistance, r_DS(ON) = 0.021Ω
• Temperature Compensating PSPICE^® Model
• Temperature Compensating SABER^© Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
94
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE^® is a registered trademark of MicroSim Corporation.
SABER^© is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999