HUF76112SK8 Datasheet, PDF (1/12 Pages) Intersil Corporation – 7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET

TM
Data Sheet
HUF76112SK8
April 2000 File Number 4834.1
7.5A, 30V, 0.026 Ohm, N-Channel, Logic
Level Power MOSFET
The HUF76112SK8 is an Application-Specific MOSFET
optimized for switching when used as the upper switch in
synchronous buck applications. The low gate charge and low
input capacitance results in lower driver and lower switching
losses, thereby increasing the overall system efficiency.
Symbol
SOURCE (1)
SOURCE (2)
SOURCE (3)
GATE (4)
DRAIN (8)
DRAIN (7)
DRAIN (6)
DRAIN (5)
Packaging
SO8 (JEDEC MS-012AA)
BRANDING DASH
5
1
2
34
Features
• 7.5A, 30V
- r_DS(ON) = 0.026Ω, V_GS = 10V
- r_DS(ON) = 0.033Ω, V_GS = 5V
• PWM Optimized for Synchronous Buck Applications
• Fast Switching
• Low Gate Charge
- Q_g Total 15nC (Typ)
• Low Capacitance
- C_ISS 725pF (Typ)
- C_RSS 36pF (Typ)
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76112SK8
MS-012AA
76112SK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the HUF76112SK8 in tape and reel, e.g., HUF76112SK8T.
Absolute Maximum Ratings T_A = 25^oC, Unless Otherwise Specified
SYMBOL
PARAMETER
HUF76112SK8
UNITS
V_DSS
V_DGR
V_GS
I_D
I_D
I_DM
P_D
Drain to Source Voltage (Note 1)
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1)
Gate to Source Voltage
Drain Current
Continuous
Continuous
(T_A
(T_A
=
=
2150^o_0CoC, V, _VGGSS==105VV))
(Figure 2)
(Note 2)
(Note
2)
Pulsed Drain Current
Power Dissipation (Note 2)
Derate Above 25^oC
T_J, T_STG
Operating and Storage Temperature
Maximum Temperature for Soldering
T_L
T_pkg
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
THERMAL SPECIFICATIONS Thermal Resistance Junction to Ambient
Measured using FR-4 board with 0.76 in² (490.3 mm²) copper pad at 10
second.
R_θJA
Measured using FR-4 board with 0.054 in² (34.8 mm²) copper pad at 1000
seconds. (Figure 23)
Measured using FR-4 board with 0.0115 in² (7.42 mm²) copper pad at 1000
seconds. (Figure 23)
30
30
±16
7.5
4.0
Figure 4
2.5
20
-55 to 150
300
260
50
152
189
V
V
V
A
A
A
W
mW/^oC
o_C
o_C
o_C
o_C/W
o_C/W
o_C/W
NOTES:
1. T_J = 25^oC to 125^oC.
2. R_θJA = 50 ^oC/W
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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