HUF75852G3 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET

TM
Data Sheet
HUF75852G3
April 2000
File Number 4846
75A, 150V, 0.016 Ohm, N-Channel,
UltraFET Power MOSFET
Packaging
JEDEC TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- r_DS(ON) = 0.016Ω, V_GS = 10V
• Simulation Models
- Temperature Compensated PSPICE™ and SABER^©
Electrical Models
- Spice and SABER^© Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
HUF75852G3
TO-247
BRAND
75852G
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
HUF75852G3
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
150
V
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
150
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
±20
V
Drain Current
Continuous (T_C = 25^oC, V_GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
75
A
Continuous (T_C = 100^oC, V_GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
75
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Figures 6, 14, 15
Power Dissipation . . .
Derate Above 25^oC
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P_D
...
500
3.33
W
W/^oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 175
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L
300
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
260
o_C
o_C
NOTE:
1. T_J = 25^oC to 150^oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE™ is a trademark of MicroSim Corporation.
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