HUF75842P3 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET

Data Sheet
HUF75842P3, HUF75842S3S
December 1999
File Number 4815
43A, 150V, 0.042 Ohm, N-Channel,
UltraFET Power MOSFET
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
HUF75842P3
GATE
SOURCE
HUF75842S3S
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- r_DS(ON) = 0.042Ω, V_GS = 10V
• Simulation Models
- Temperature Compensated PSPICE^® and SABER^™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75842P3
TO-220AB
75842P
HUF75842S3S
TO-263AB
75842S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75842S3ST.
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
HUF75842P3
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Drain Current
Continuous
Continuous
(T_C=
(T_C=
2150^o_0CoC, V, _VGGSS==101V0V) _{)(F(Figiugruere2)2).}
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I_D
I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
150
V
150
V
±20
V
43
A
30
A
Figure 4
Figures 6, 14, 15
Power Dissipation . . .
Derate Above 25^oC
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P_D
...
230
1.53
W
W/^oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 175
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
300
o_C
260
o_C
NOTES:
1. T_J = 25^oC to 150^oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
4-1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER™ is a trademark of Analogy, Inc. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999.