HUF75823D3 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – 14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET

TM
Data Sheet
14A, 150V, 0.150 Ohm, N-Channel,
UltraFET Power MOSFET
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
HUF75823D3
GATE
SOURCE
HUF75823D3S
Symbol
D
G
S
HUF75823D3, HUF75823D3S
April 2000
File Number 4847
Features
• Ultra Low On-Resistance
- r_DS(ON) = 0.150Ω, V_GS = 10V
• Simulation Models
- Temperature Compensated PSPICE™ and SABER^©
Electrical Models
- Spice and SABER^© Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75823D3
TO-251AA
75823D
HUF75823D3S
TO-252AA
75823D
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75823D3ST.
Absolute Maximum Ratings T_C = 25^oC, Unless
Otherwise Specified
HUF75823D3, HUF75823D3S
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
150
V
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
150
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GS
±20
V
Drain Current
Continuous
Continuous
(T_C=
(T_C=
2150^o_0CoC, V, _VGGSS==101V0V) _{)(F(Figiugruere2)2).}
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I_D
I_D
14
10
A
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D
85
Derate Above 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.57
W
W/^oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 175
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
300
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
260
o_C
o_C
NOTES:
1. T_J = 25^oC to 150^oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
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