HUF75652G3 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET

Data Sheet
HUF75652G3
October 1999 File Number 4746.1
75A, 100V, 0.008 Ohm, N-Channel
UltraFET Power MOSFET
Packaging
JEDEC TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
Symbol
HUF75652G3
D
G
S
Features
• Ultra Low On-Resistance
- r_DS(ON) = 0.008Ω, V_GS = 10V
• Simulation Models
- Temperature Compensated PSPICE^® and SABER^©
Electrical Models
- Spice and SABER^© Thermal Impedance Models
- www.semi.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75652G3
TO-247
75652G
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
HUF75652G3
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Drain Current
Continuous
Continuous
(T_C=
(T_C=
2150^o_0CoC, V, _VGGSS==101V0V) _{)(F(Figiugruere2)2).}
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I_D
I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
100
V
100
V
±20
V
75
A
75
A
Figure 4
Figures 6, 17, 18
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Derate Above 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
515
3.44
W
W/^oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 175
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
300
o_C
260
o_C
NOTES:
1. T_J = 25^oC to 150^oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER^© is a Copyright of Analogy Inc. 1-888-INTERSIL or 407-727-9207 | Copyright © Intersil Corporation 1999.