HUF75631SK8 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET

Data Sheet
5.5A, 100V, 0.039 Ohm, N-Channel,
UltraFET Power MOSFET
Packaging
JEDEC MS-012AA
BRANDING DASH
Symbol
1
2
3
4
SOURCE (1)
SOURCE (2)
SOURCE (3)
GATE (4)
5
DRAIN (8)
DRAIN (7)
DRAIN (6)
DRAIN (5)
HUF75631SK8
October 1999
File Number 4785
Features
• Ultra Low On-Resistance
- r_DS(ON) = 0.039Ω, V_GS = 10V
• Simulation Models
- Temperature Compensated PSPICE^® and SABER^©
Electrical Models
- Spice and SABER^© Thermal Impedance Models
- www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75631SK8
MS-012AA
75631SK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75631SK8T.
Absolute Maximum Ratings T_A = 25^oC, Unless Otherwise Specified
HUF75631SK8
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Drain Current
Continuous (T_A= 25^oC, V_GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Continuous (T_A= 100^oC, V_GS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
100
V
100
V
±20
V
5.5
A
3.5
A
Figure 4
Figures 6, 14, 15
Power Dissipation . . .
Derate Above 25^oC
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P_D
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
NOTES:
1. T_J = 25^oC to 150^oC.
2. 50^oC/W measured using FR-4 board with 0.76 in² (490.3 mm²) copper pad at 10 second.
3. 152^oC/W measured using FR-4 board with 0.054 in² (34.8 mm²) copper pad at 1000 seconds
4. 189^oC/W measured using FR-4 board with 0.0115 in² (7.42 mm²) copper pad at 1000 seconds
2.5
20
-55 to 150
300
260
W
mW/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE™ is a registered trademark of MicroSim Corporation.
SABER^© is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999