HUF75545P3 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET

Data Sheet
HUF75545P3, HUF75545S3S
June 1999 File Number 4738.1
75A, 80V, 0.010 Ohm, N-Channel, UltraFET
Power MOSFET
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
HUF75545P3
Symbol
GATE
SOURCE
HUF75545S3S
D
G
S
Features
• Ultra Low On-Resistance
- r_DS(ON) = 0.010Ω, V_GS = 10V
• Simulation Models
- Temperature Compensated PSPICE^® and SABER^©
Electrical Models
- Spice and SABER^© Thermal Impedance Models
- www.semi.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75545P3
TO-220AB
75545P
HUF75545S3S
TO-263AB
75545S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75545S3ST.
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
HUF75545P3, HUF75545S3S UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Drain Current
Continuous
Continuous
(T_C=
(T_C=
2150^o_{0CoC, ,VVGGSS}==101V0V) _{)(F(Figiugruere2)2).}
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I_D
I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
80
V
80
V
±20
V
75
A
73
A
Figure 4
Figures 6, 14, 15
Power Dissipation . . .
Derate Above 25^oC
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P_D
...
270
W
1.8
W/^oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 175
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
300
o_C
260
o_C
NOTES:
1. T_J = 25^oC to 150^oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER^© is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999