HUF75332G3 Datasheet, PDF (1/18 Pages) Fairchild Semiconductor – 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs

HUF75332G3, HUF75332P3, HUF75332S3S
Data Sheet
June 1999 File Number 4489.3
60A, 55V, 0.019 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75332.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75332G3
TO-247
75332G
HUF75332P3
TO-220AB
75332P
HUF75332S3S
TO-263AB
75332S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75332S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Features
• 60A, 55V
• Simulation Models
- Temperature Compensated PSPICE^® and SABER^©
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
94
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999