HUF75309T3ST Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET

Data Sheet
HUF75309T3ST
June 1999
File Number 4377.3
3A, 55V, 0.070 Ohm, N-Channel UltraFET
Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET™ process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75309.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75309T3ST SOT-223
5309
NOTE: HUF75309T3ST is available only in tape and reel.
Features
• 3A, 55V
• Ultra Low On-Resistance, r_DS(ON) = 0.070Ω
• Diode Exhibits Both High Speed and Soft Recovery
• Temperature Compensating PSPICE™ Model
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
SOT-223
SOURCE
DRAIN
GATE
23
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET is a trademark of Intersil Corporation. PSPICE™ is a trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999