HUF75229P3 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET

Data Sheet
HUF75229P3
June 1998
File Number 4536.1
44A, 50V, 0.022 Ohm, N-Channel UltraFET
Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET™ process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75229P3
TO-220AB
75229P
NOTE: When ordering use the entire part number.
Features
• 44A, 50V
• Low On-Resistance, r_DS(ON) = 0.022Ω
• Temperature Compensating PSPICE Model
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
UltraFET is a trademark of Intersil Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999