HS-81C55RH_00 Datasheet, PDF (1/11 Pages) Intersil Corporation – Radiation Hardened 256 x 8 CMOS RAM

TM
Data Sheet
HS-81C55RH, HS-81C56RH
August 2000 File Number 3039.2
Radiation Hardened 256 x 8 CMOS RAM
The HS-81C55/56RH are radiation hardened RAM and I/O
chips fabricated using the Intersil radiation hardened Self-
Aligned Junction Isolated (SAJI) silicon gate technology.
Latch-up free operation is achieved by the use of epitaxial
starting material to eliminate the parasitic SCR effect seen in
conventional bulk CMOS devices.
The HS-81C55/56RH is intended for use with the
HS-80C85RH radiation hardened microprocessor system.
The RAM portion is designed as 2048 static cells organized
as 256 x 8. A maximum post irradiation access time of
500ns allows the HS-81C55/56RH to be used with the
HS-80C85RH CPU without any wait states. The
HS-81C55RH requires an active low chip enable while the
HS-81C56RH requires an active high chip enable. These
chips are designed for operation utilizing a single 5V power
supply.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-96766. A “hot-link” is provided
on our homepage for downloading.
http://www.intersil.com/spacedefense/space.asp
Ordering Information
ORDERING NUMBER
INTERNAL
MKT. NUMBER
5962R9676601QXC HS1-81C55RH-8
5962R9676601QYC HS9-81C55RH-8
5962R9676601VXC
HS1-81C55RH-Q
5962R9676601VYC
HS9-81C55RH-Q
5962R9676602QXC HS1-81C56RH-8
5962R9676602QYC HS9-81C56RH-8
5962R9676602VXC
HS1-81C56RH-Q
5962R9676602VYC
HS9-81C56RH-Q
TEMP. RANGE
(^oC)
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
Features
• Electrically Screened to SMD # 5962-96766
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Hardened EPI-CMOS
- Total Dose. . . . . . . . . . . . . . . . . . . . . 100 krad(Si) (Max)
- Transient Upset . . . . . . . . . . . . . . . . . .>1 x 10⁸ rad(Si)/s
- Latch-Up Free . . . . . . . . . . . . . . . . . . >1 x 10¹² rad(Si)/s
• Electrically Equivalent to Sandia SA 3001
• Pin Compatible with Intel 8155/56
• Bus Compatible with HS-80C85RH
• Single 5V Power Supply
• Low Standby Current . . . . . . . . . . . . . . . . . . . .200µA Max
• Low Operating Current . . . . . . . . . . . . . . . . . . . . 2mA/MHz
• Completely Static Design
• Internal Address Latches
• Two Programmable 8-Bit I/O Ports
• One Programmable 6-Bit I/O Port
• Programmable 14-Bit Binary Counter/Timer
• Multiplexed Address and Data Bus
• Self Aligned Junction Isolated (SAJI) Process
• Military Temperature Range . . . . . . . . . . . -55^oC to 125^oC
Functional Diagram
IO/M
AD0 - AD7
CE OR CE†
ALE
RD
WR
RESET
TIMER CLK
TIMER OUT
256 x 8
STATIC
RAM
PORT A
A
8 PA0 - PA7
PORT B
B
8 PB0 - PB7
C
TIMER
† 81C55RH = CE
81C56RH = CE
PORT C
8 PC0 - PC5
VDD (10V)
GND
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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