HS-6664RH Datasheet, PDF (1/5 Pages) Intersil Corporation – Radiation Hardened 8kx8 CMOS PROM

TM
Data Sheet
HS-6664RH
August 2000
File Number 3197.4
Radiation Hardened 8kx8 CMOS PROM
[ /Title
(HS-
6664R
H)
/Subjec
t
(Radiat
ion
Harden
ed 8K
x8
CMOS
PROM
)
/Autho
r ()
/Keyw
ords
(Intersi
l
Corpor
ation,
semico
nducto
r,
Radiati
on
Harden
ed,
RH,
Rad
Hard,
QML,
Satellit
e,
SMD,
Class
V,
The Intersil HS-6664RH is a radiation hardened 64k CMOS
PROM, organized in an 8k word by 8-bit format. The chip is
manufactured using a radiation hardened CMOS process,
and utilizes synchronous circuit design techniques to
achieve high speed performance with very low power
dissipation.
On-chip address latches are provided, allowing easy
interfacing with microprocessors that use a multiplexed
address/data bus structure. The output enable control (G)
simplifies system interfacing by allowing output data bus
control in addition to the chip enable control (E). All bits are
manufactured storing a logical “0” and can be selectively
programmed for a logical “1” at any bit location.
Applications for the HS-6664RH CMOS PROM include low
power microprocessor based instrumentation and
communications systems, remote data acquisition and
processing systems, and processor control storage.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95626. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.htm
Ordering Information
ORDERING NUMBER
INTERNAL
MKT. NUMBER
TEMP. RANGE
(^oC)
5962F9562601QXC
HS1-6664RH-8
-55 to 125
5962F9562601QYC
HS9-6664RH-8
-55 to 125
5962F9562601VXC
HS1-6664RH-Q
-55 to 125
5962F9562601VYC
HS9-6664RH-Q
-55 to 125
HS1-6664RH/PROTO HS1-6664RH/PROTO -55 to 125
HS9-6664RH/PROTO HS9-6664RH/PROTO -55 to 125
Features
• Electrically Screened to SMD # 5962-95626
• QML Qualified per MIL-PRF-38535 Requirements
• 1.2 Micron Radiation Hardened Bulk CMOS
• Total Dose . . . . . . . . . . . . . . . . . . . . . . 300 krad(Si) (Max)
• Transient Output Upset . . . . . . . . . . . . . . >5x10⁸ rad(Si)/s
• LET >100 MEV-cm²/mg
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . . 35ns (Typ)
• Single 5V Power Supply
• Single Pulse 10V Field Programmable
• Synchronous Operation
• On-Chip Address Latches
• Three-State Outputs
• NiCr Fuses
• Low Standby Current . . . . . . . . . . . . . . <500μA (Pre-Rad)
• Low Operating Current. . . . . . . . . . . . . . . . . . <15mA/MHz
• Military Temperature Range. . . . . . . . . . . -55^oC to 125^oC
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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