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HS-6664RH-T Datasheet, PDF (1/3 Pages) Intersil Corporation – Radiation Hardened 8K x 8 CMOS PROM | |||
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Data Sheet
HS-6664RH-T
July 1999 File Number 4609.1
Radiation Hardened 8K x 8 CMOS PROM
Intersilâs Satellite Applications FlowTM (SAF) devices are fully
tested and guaranteed to 100kRAD total dose. These QML
Class T devices are processed to a standard ï¬ow intended
to meet the cost and shorter lead-time needs of large
volume satellite manufacturers, while maintaining a high
level of reliability.
The Intersil HS-6664RH-T is a radiation hardened 64K
CMOS PROM, organized in an 8K word by 8-bit format. The
chip is manufactured using a radiation hardened CMOS
process, and utilizes synchronous circuit design techniques
to achieve high speed performance with very low power
dissipation.
On-chip address latches are provided, allowing easy
interfacing with microprocessors that use a multiplexed
address/data bus structure. The output enable control (G)
simpliï¬es system interfacing by allowing output data bus
control in addition to the chip enable control (E). All bits are
manufactured storing a logical â0â and can be selectively
programmed for a logical â1â at any bit location.
Speciï¬cations
Speciï¬cations for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Speciï¬cations for the HS-666s4RH-T
are contained in SMD 5962-95626. A âhot-linkâ is provided
from our website for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Intersilâs Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/quality/manuals.asp
Ordering Information
ORDERING
INFORMATION
PART
NUMBER
TEMP.
RANGE
(oC)
5962R9562601TXC
HS1-6664RH-T
-55 to 125
HS1-6664RH/Proto
HS1-6664RH/Proto
-55 to 125
5962R9562601TYC
HS9-6664RH-T
-55 to 125
HS9-6664RH/Proto
HS9-6664RH/Proto
-55 to 125
NOTE: Minimum order quantity for -T is 150 units through
distribution, or 450 units direct.
Features
⢠QML Class T, Per MIL-PRF-38535
⢠Radiation Performance
- Gamma Dose (γ) 1 x 105 RAD(Si)
- No Latch-Up, SEU LET >100MeV/mg/cm2
⢠Transient Output Upset >5 x 108 RAD (Si)/s
⢠Fast Access Time - 35ns (Typical)
⢠Single 5V Power Supply, Synchronous Operation
⢠Single Pulse 10V Field Programmable NiCr Fuses
⢠On-Chip Address Latches, Three-State Outputs
⢠Low Standby Current <500µA (Pre-Rad)
⢠Low Operating Current <15mA/MHz
Pinouts
HS1-6664RH-T (SBDIP), CDIP2-T28
TOP VIEW
NC 1
A12 2
A7 3
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
DQ0 11
DQ1 12
DQ2 13
GND 14
28 VDD
27 P â
26 NC
25 A8
24 A9
23 A11
22 G
21 A10
20 E
19 DQ7
18 DQ6
17 DQ5
16 DQ4
15 DQ3
HS9-6664RH-T (FLATPACK), CDFP3-F28
TOP VIEW
NC
1
A12
2
A7
3
A6
4
A5
5
A4
6
A3
7
A2
8
A1
9
A0
10
DQ0
11
DQ1
12
DQ2
13
GND
14
28
VDD
27
Pâ
26
NC
25
A8
24
A9
23
A11
22
G
21
A10
20
E
19
DQ7
18
DQ6
17
DQ5
16
DQ4
15
DQ3
â P must be hardwired at all times to VDD, except during programming.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
Satellite Applications Flow⢠(SAF) is a trademark of Intersil Corporation.
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