HS-6617RH_00 Datasheet, PDF (1/5 Pages) Intersil Corporation – Radiation Hardened 2K x 8 CMOS PROM

TM
Data Sheet
HS-6617RH
August 2000 File Number 3033.4
Radiation Hardened 2K x 8 CMOS PROM
The Intersil HS-6617RH is a radiation hardened 16K CMOS
PROM, organized in a 2K word by 8-bit format. The chip is
manufactured using a radiation hardened CMOS process,
and is designed to be functionally equivalent to the
HM-6617. Synchronous circuit design techniques combine
with CMOS processing to give this device high speed
performance with very low power dissipation.
On chip address latches are provided, allowing easy
interfacing with recent generation microprocessors that use
multiplexed address/data bus structure, such as the
HS-80C85RH or HS-80C86RH. The output enable control
(G) simplifies microprocessor system interfacing by allowing
output data bus control, in addition to, the chip enable
control. Synchronous operation of the HS-6617RH is ideal
for high speed pipe-lined architecture systems and also in
synchronous logic replacement functions.
Applications for the HS-6617RH CMOS PROM include low
power microprocessor based instrumentation and
communications systems, remote data acquisition and
processing systems, processor control store, and
synchronous logic replacement.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95708. A “hot-link” is provided
on our homepage for downloading.
http://www.intersil.com/spacedefense/space.htm
Ordering Information
ORDERING NUMBER
INTERNAL
MKT. NUMBER
TEMP. RANGE
(^oC)
5962R9570801QJC
HS1-6617RH-8
-55 to 125
5962R9570801QXC HS9-6617RH-Q
-55 to 125
5962R9570801VJC
HS1-6617RH-Q
-55 to 125
5962R9570801VXC
HS9-6617RH-Q
-55 to 125
HS1-6617RH/PROTO HS1-6617RH/PROTO -55 to 125
HS9-6617RH/PROTO HS9-6617RH/PROTO -55 to 125
Features
• Electrically Screened to SMD # 5962-95708
• QML Qualified per MIL-PRF-38535 Requirements
• Total Dose . . . . . . . . . . . . . . . . . . . . . . 100 krad(Si) (Max)
• Latch-Up Free. . . . . . . . . . . . . . . . . . . . >1 x 10¹² rad(Si)/s
• Field Programmable
• Functionally Equivalent to HM-6617
• Pin Compatible with Intel 2716
• Low Standby Power . . . . . . . . . . . . . . . . . . . 1.1mW (Max)
• Low Operating Power . . . . . . . . . . . . 137.5mW/MHz (Max)
• Fast Access Time . . . . . . . . . . . . . . . . . . . . . . 100ns (Max)
• TTL Compatible Inputs/Outputs
• Synchronous Operation
• On Chip Address Latches
• Three-State Outputs
• Nicrome Fuse Links
• Easy Microprocessor Interfacing
• Military Temperature Range . . . . . . . . . . . -55^oC to 125^oC
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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