HS-302EH Datasheet, PDF (1/3 Pages) Intersil Corporation – Radiation Hardened CMOS Dual DPST Analog Switch

Radiation Hardened CMOS Dual DPST Analog Switch
HS-302RH, HS-302EH
Intersil’s Satellite Applications Flow™ (SAF) devices are fully
tested and guaranteed to 100kRAD Total Dose. These QML
Class T devices are processed to a standard flow intended to
meet the cost and shorter lead-time needs of large volume
satellite manufacturers, while maintaining a high level of
reliability.
The HS-302RH, HS-302EH analog switch is a monolithic device
fabricated using Radiation Hardened CMOS technology and
the Intersil dielectric isolation process for latch-up free
operation. Improved total dose hardness is obtained by layout
(thin oxide tabs extending to a channel stop) and processing
(hardened gate oxide). These switches offer low-resistance
switching performance for analog voltages up to the supply
rails. “ON” resistance is low and stays reasonably constant
over the full range of operating voltage and current. “ON”
resistance also stays reasonably constant when exposed to
radiation, being typically 30Ω pre-rad and 35Ω post
100kRAD(Si). This device provide break-before-make
switching.
Specifications
Specifications for Rad Hard QML devices are controlled by the
Defense Logistics Agency Land and Maritime (DLA). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-302RH, HS-302EH
are contained in SMD# 5962-95812.
Functional Diagram
IN
N
P
D
TRUTH TABLE
LOGIC
ALL SWITCHES
0
OFF
1
ON
Features
• QML Class T, Per MIL-PRF-38535
• Radiation Performance
- Gamma Dose (γ) 1 x 10⁵ RAD(Si)
• No Latch-Up, Dielectrically Isolated Device Islands
• Pin for Pin Compatible with Intersil HI-302 Series Analog
Switches
• Analog Signal Range 15V
• Low Leakage. . . . . . . . . . . . . . . . . . . . . 100nA (Max, Post Rad)
• Low R_ON . . . . . . . . . . . . . . . . . . . . . . . . . . 60Ω (Max, Post Rad)
• Low Operating Power. . . . . . . . . . . . . .100µA (Max, Post Rad)
Pin Configurations
HS1-302RH, HS1-302EH
(SBDIP), CDIP2-T14
TOP VIEW
NC ¹
S3 ²
D3 ³
D1 ⁴
S1 ⁵
IN1 ⁶
GND ⁷
14 V+
13 S4
12 D4
11 D2
10 S2
9 IN2
8 V-
HS9-302RH, HS9-302EH
(FLATPACK), CDFP3-F14
TOP VIEW
1
NC
2
S3
3
D3
4
D1
5
S1
6
IN1
7
GND
14
V+
13
S4
12
D4
11
D2
10
S2
9
IN2
8
V-
April 1, 2013
FN4603.2
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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