HM-6561 Datasheet, PDF (1/9 Pages) Intersil Corporation – 256 x 4 CMOS RAM

HM-6561/883
March 1997
256 x 4 CMOS RAM
Features
Description
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max
• Low Power Operation . . . . . . . . . . . . . 20mW/MHz Max
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . 200ns Max
• Data Retention . . . . . . . . . . . . . . . . . . . . . . . .at 2.0V Min
• TTL Compatible Input/Output
• High Output Drive - 1 TTL Load
• On-Chip Address Registers
• Common Data In/Out
The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated
using self-aligned silicon gate technology. Synchronous
circuit design techniques are employed to achieve high per-
formance and low power operation.
On-chip latches are provided for address and data outputs
allowing efficient interfacing with microprocessor systems.
The data output buffers can be forced to a high impedance
state for use in expanded memory arrays. The data inputs
and outputs are multiplexed internally for common I/O bus
compatibility.
The HM-6561/883 is a fully static RAM and may be
maintained in any state for an indefinite period of time. Data
retention supply voltage and supply current are guaranteed
over temperature.
• Three-State Output
• Easy Microprocessor Interfacing
Ordering Information
PACKAGE TEMPERATURE RANGE
220ns
CERDIP
-55^oC to +125^oC
HM1-6561B/883
300ns
HM1-6561/883
PKG. NO.
F18.3
Pinout
HM-6561/883 (CERDIP)
TOP VIEW
A3 1
A2 2
A1 3
A0 4
A5 5
A6 6
A7 7
GND 8
E9
18 VCC
17 A4
16 W
15 S1
14 DQ3
13 DQ2
12 DQ1
11 DQ0
10 S2
PIN
DESCRIPTION
A
Address Input
E
Chip Enable
W Write Enable
S
Chip Select
DQ Data In/Out
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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File Number 2990.1