HGTP15N40C1 Datasheet, PDF (1/5 Pages) Intersil Corporation – 15A, 20A, 400V and 500V N-Channel IGBTs

HGTP15N40C1, 40E1, 50C1, 50E1,
HGTH20N40C1, 40E1, 50C1, 50E1
April 1995
15A, 20A,
400V and 500V N-Channel IGBTs
Features
• 15A and 20A, 400V and 500V
• V_CE(ON) 2.5V
• T_FI 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• No Anti-Parallel Diode
Applications
Packages
HGTH-TYPES JEDEC TO-218AC
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
• Power Supplies
• Motor Drives
• Protection Circuits
Description
HGTP-TYPES JEDEC TO-220AB
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1,
HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1
are n-channel enhancement-mode insulated gate bipolar transistors
(IGBTs) designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTH20N40C1
TO-218AC
G20N40C1
HGTH20N40E1
TO-218AC
G20N40E1
HGTH20N50C1
TO-218AC
G20N50C1
HGTH20N50E1
TO-218AC
G20N50E1
HGTP15N40C1
TO-220AB
G15N40C1
HGTP15N40E1
TO-220AB
G15N40E1
HGTP15N50C1
TO-220AB
G15N50C1
HGTP15N50E1
TO-220AB
G15N50E1
NOTE: When ordering, use the entire part number.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specified
HGTH20N40C1 HGTH20N50C1
HGTH20N40E1 HGTH20N50E1
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .V_CES
Collector-Gate Voltage R_GE = 1MΩ. . . . . . . . . . . . . . . . V_CGR
Reverse Collector-Emitter Voltage . . . . . . . . . . . . V_CES(rev.)
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . I_C
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM
Power Dissipation at T_C = +25^oC . . . . . . . . . . . . . . . . . . . P_D
Power Dissipation Derating T_C > +25^oC . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . T_J, T_STG
400
400
-5
±20
20
35
100
0.8
-55 to +150
500
500
-5
±20
20
35
100
0.8
-55 to +150
HGTP15N40C1
HGTP15N40E1
400
400
-5
±20
15
35
75
0.6
-55 to +150
HGTP15N50C1
HGTP15N50E1
500
500
-5
±20
15
35
75
0.6
-55 to +150
UNITS
V
V
V
V
A
A
W
W/^oC
o_C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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