HGTP14N40F3VL Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 330mJ, 400V, N-Channel Ignition IGBT

HGTP14N40F3VL
April 1995
14A, 400V N-Channel,
Logic Level Voltage Clamping IGBT
Features
Package
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• T_J = +150^oC
• Ignition Energy Capable
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
Applications
• Automotive Ignition
• Small Engine Ignition
• Fuel Ignitor
Description
This N-Channel IGBT is a MOS gated, logic level device which is
intended to be used as an ignition coil driver in automotive ignition
circuits. Unique features include an active voltage clamp between
the drain and the gate and ESD protection for the logic level gate.
Some specifications are unique to this automotive application and
are intended to assure device survival in this harsh environment.
The development type number for this device is TA49023.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP14N40F3VL
TO-220AB
14N40FVL
NOTE: When ordering, use the entire part number.
Symbol
GATE
COLLECTOR
EMITTER
Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specified
Collector-Emitter Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES
Collector-Gate Breakdown Voltage R_GE = 10kΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CGR
Collector Current Continuous
V_GE = 4.5V at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C25
V_GE = 4.5V at T_C = +90^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C90
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES
Gate-Emitter Voltage Pulsed or . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM
Gate-Emitter Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_GEM
Open Secondary Turn-Off Current
L = 2.3mH at +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CO
L = 2.3mH at +150^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CO
Drain to Source Avalanche Energy at L = 2.3mH, T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation Total at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_T
Power Dissipation Derating T_C > +25^oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
HGTP14N40F3VL
420
420
19
14
±10
±12
±10
17
12
330
83
0.67
-40 to +150
260
6
UNITS
V
V
A
A
V
V
mA
A
A
mJ
W
W/^oC
o_C
o_C
KV
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
407-727-9207 | Copyright © Intersil Corporation 1999
3-50
File Number 3407.2