HGTP14N36G3VL Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 14A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs

June 1995
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
14A, 360V N-Channel,
Logic Level, Voltage Clamping IGBTs
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• T_J = 175^oC
• Ignition Energy Capable
Packages
COLLECTOR
(FLANGE)
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in auto-
motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro-
vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt
resister are provided in the gate circuit.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP14N36G3VL
TO-220AB
14N36GVL
HGT1S14N36G3VL
TO-262AA
14N36GVL
HGT1S14N36G3VLS TO-263AB
14N36GVL
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S14N36G3VLS9A.
COLLECTOR
(FLANGE)
JEDEC TO-262AA
EMITTER
COLLECTOR
GATE
JEDEC TO-263AB
COLLECTOR
(FLANGE)
M
A
GATE
EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
The development type number for this device is TA49021.
R₁
GATE
R₂
Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specified
Collector-Emitter Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CER
Emitter-Collector Bkdn Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_ECS
Collector Current Continuous at V_GE = 5V, T_C = +25^oC. . . . . . . . . . . . . . . . . . . . . . . I_C25
at V_GE = 5V, T_C = +100^oC. . . . . . . . . . . . . . . . . . . . . .I_C100
Gate-Emitter Voltage (Note) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM
Inductive Switching Current at L = 2.3mH, T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . .I_SCIS
at L = 2.3mH, T_C = + 175^oC . . . . . . . . . . . . . . . . . . . . . .I_SCIS
Collector to Emitter Avalanche Energy at L = 2.3mH, T_C = +25^oC. . . . . . . . . . . . . . . E_AS
Power Dissipation Total at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Power Dissipation Derating T_C > +25^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T_J, T_STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L
Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
NOTE: May be exceeded if I_GEM is limited to 10mA.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
3-55
EMITTER
HGTP14N36G3VL,
HGT1S14N36G3VL,
HGT1S14N36G3VLS
390
24
18
14
±10
17
12
332
100
0.67
-40 to +175
260
6
UNITS
V
V
A
A
V
A
A
mJ
W
W/^oC
o_C
o_C
KV
File Number 4008