HGTP10N40F1D Datasheet, PDF (1/5 Pages) Intersil Corporation – 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

April 1995
HGTP10N40F1D,
HGTP10N50F1D
10A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
Features
Package
• 10A, 400V and 500V
• Latch Free Operation
• Typical Fall Time < 1.4µs
• High Input Impedance
• Low Conduction Loss
• Anti-Parallel Diode
• t_RR < 60ns
Description
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
The IGBT is a MOS gated high voltage switching device combin-
ing the best features of MOSFETs and bipolar transistors. The
device has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between +25^oC
and +150^oC. The diode used in parallel with the IGBT is an
ultrafast (t_RR < 60ns) with soft recovery characteristic.
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP10N40F1D TO-220AB
10N40F1D
HGTP10N50F1D TO-220AB
10N50F1D
NOTE: When ordering, use the entire part number
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES
Collector-Gate Voltage R_GE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV_CGR
Collector Current Continuous at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . I_C25
at T_C = +90^oC . . . . . . . . . . . . . . . . . . . . . . . . . I_C90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES
Diode Forward Current at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_F25
at T_C = +90^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_F90
Power Dissipation Total at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Power Dissipation Derating T_C > +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . T_J, T_STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
NOTE:
1. T_J = +150^oC, Min. R_GE = 25Ω without latch.
HGTP10N40F1D
400
400
12
10
12
±20
16
10
75
0.6
-55 to +150
260
HGTP10N50F1D
500
500
12
10
12
±20
16
10
75
0.6
-55 to +150
260
UNITS
V
V
A
A
A
V
A
A
W
W/^oC
o_C
o_C
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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3-25
File Number 2751.2