HGTG40N60A4 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 600V, SMPS Series N-Channel IGBT

TM
Data Sheet
HGTG40N60A4
April 2000 File Number 4782.2
600V, SMPS Series N-Channel IGBT
The HGTG40N60A4 is a MOS gated high voltage switching
device combining the best features of a MOSFET and a
bipolar transistor. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The much lower on-state voltage drop
varies only moderately between 25^oC and 150^oC. This IGBT
is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.
Formerly Developmental Type TA49347.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG40N60A4
TO-247
40N60A4
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 100kHz Operation At 390V, 40A
• 200kHz Operation At 390V, 20A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . 55ns at T_J = 125^o
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
4-1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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