HGTG34N100E2 Datasheet, PDF (1/5 Pages) Intersil Corporation – 34A, 1000V N-Channel IGBT

HGTG34N100E2
April 1995
34A, 1000V N-Channel IGBT
Features
Package
• 34A, 1000V
• Latch Free Operation
• Typical Fall Time - 710ns
• High Input Impedance
• Low Conduction Loss
JEDEC STYLE TO-247
COLLECTOR
(BOTTOM SIDE
METAL)
EMITTER
COLLECTOR
GATE
Description
The HGTG34N100E2 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOS-
FET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately
between +25^oC and +150^oC.
The IGBTs are ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power sup-
plies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTG34N100E2 TO-247
G34N100E2
NOTE: When ordering, use the entire part number.
Formerly Developmental Type TA9895.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES
Collector-Gate Voltage, R_GE =1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_CGR
Collector Current Continuous at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25
at V_GE = 15V, at T_C = +90^oC . . . . . . . . . . . . . . . . . . . I_C90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM
Switching Safe Operating Area at T_J = +150^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Power Dissipation Derating T_C > +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Short Circuit Withstand Time (Note 2) at V_GE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC
at V_GE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC
NOTE:
HGTG34N100E2
1000
1000
55
34
200
±20
±30
200A at 0.8 BV_CES
208
1.67
-55 to +150
260
3
10
UNITS
V
V
A
A
A
V
V
-
W
W/^oC
o_C
o_C
µs
µs
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V_CE(PEAK) = 600V, T_C = +125^oC, R_GE = 25Ω.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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3-124
File Number 2827.3