HGTG32N60E2 Datasheet, PDF (1/4 Pages) Intersil Corporation – 32A, 600V N-Channel IGBT

HGTG32N60E2
April 1995
32A, 600V N-Channel IGBT
Features
Package
• 32A, 600V
• Latch Free Operation
• Typical Fall Time - 600ns
• High Input Impedance
• Low Conduction Loss
JEDEC STYLE TO-247
COLLECTOR
(BOTTOM SIDE
METAL)
EMITTER
COLLECTOR
GATE
Description
The IGBT is a MOS gated high voltage switching device combin-
ing the best features of MOSFETs and bipolar transistors. The
device has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between +25^oC
and +150^oC.
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are essen-
tial, such as: AC and DC motor controls, power supplies and
drivers for solenoids, relays and contactors.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
This device incorporates generation two design techniques
which yield improved peak current capability and larger short cir-
cuit withstand capability than previous designs.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTG32N60E2
TO-247
G32N60E2
NOTE: When ordering, use the entire part number.
G
E
Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES
Collector-Gate Voltage R_GE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_CGR
Collector Current Continuous at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25
at V_GE = 15V, at T_C = +90^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM
Switching Safe Operating Area at T_J = +150^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Power Dissipation Derating T_C > +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Short Circuit Withstand Time (Note 2)at V_GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC
at V_GE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC
NOTES:
HGTG32N60E2
600
600
50
32
200
±20
±30
200A at 0.8 BV_CES
208
1.67
-55 to +150
260
3
15
UNITS
V
V
A
A
A
V
V
-
W
W/^oC
o_C
o_C
µs
µs
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V_CE(PEAK) = 360V, T_C = +125^oC, R_GE = 25Ω.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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3-120
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