HGTG30N120D2 Datasheet, PDF (1/5 Pages) Intersil Corporation – 30A, 1200V N-Channel IGBT

HGTG30N120D2
April 1995
30A, 1200V N-Channel IGBT
Features
Package
• 30A, 1200V
• Latch Free Operation
• Typical Fall Time - 580ns
• High Input Impedance
• Low Conduction Loss
Description
The HGTG30N120D2 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOS-
FET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately
between +25^oC and +150^oC.
The IGBTs are ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power sup-
plies and drivers for solenoids, relays and contactors.
JEDEC STYLE TO-247
COLLECTOR
(BOTTOM SIDE
METAL)
EMITTER
COLLECTOR
GATE
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
HGTG30N120D2
TO-247
Formerly Developmental Type TA49010
BRAND
G30N120D2
G
E
Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES
Collector-Gate Voltage, R_GE =1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_CGR
Collector Current Continuous at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25
at V_GE =15V at T_C = +90^oC . . . . . . . . . . . . . . . . . . . . I_C90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM
Switching Safe Operating Area at T_J = +150^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Power Dissipation Total Derating T_C > +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Short Circuit Withstand Time (Note 2) at V_GE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . t_SC
at V_GE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . t_SC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V_CE(PEAK) = 720V, T_C = +125^oC, R_GE = 25Ω.
HGTG30N120D2
1200
1200
50
30
200
±20
±30
200A at 0.8 BV_CES
208
1.67
-55 to +150
260
6
15
UNITS
V
V
A
A
A
V
V
-
W
W/^oC
o_C
o_C
µS
µS
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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3-111
File Number 2834.2