HGTG24N60D1 Datasheet, PDF (1/4 Pages) Intersil Corporation – 24A, 600V N-Channel IGBT

HGTG24N60D1
May 1995
24A, 600V N-Channel IGBT
Features
• 24A, 600V
• Latch Free Operation
• Typical Fall Time <500ns
• High Input Impedance
• Low Conduction Loss
Package
JEDEC STYLE TO-247
EMITTER
COLLECTOR
(BOTTOM SIDE
METAL)
COLLECTOR
GATE
Description
The IGBT is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25^oC and +150^oC.
IGBTs are ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power sup-
plies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
PART NUMBER
PACKAGE
BRAND
E
HGTG24N60D1
TO-247
G24N60D1
Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specific
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES
Collector-Gate Voltage R_GE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CGR
Collector Current Continuous at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25
at V_GE = 15V at T_C = +90^oC . . . . . . . . . . . . . . . . . . . . I_C90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES
Switching Safe Operating Area at T_J = +150^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Power Dissipation Derating T_C > +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
(0.125 inch from case for 5s)
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
HGTG24N60D1
600
600
40
24
96
±25
60A at 0.8 BV_CES
125
1.0
-55 to +150
260
UNITS
V
V
A
A
A
V
-
W
W/^oC
o_C
o_C
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-103
File Number 2831.3