HGTG20N60B3D Datasheet, PDF(1/6 Page) Fairchild Semiconductor – 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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HGTG20N60B3D Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Data Sheet

HGTG20N60B3D

January 2000 File Number 3739.6

40A, 600V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

The HGTG20N60B3D is a MOS gated high voltage

switching device combining the best features of MOSFETs

and bipolar transistors. The device has the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state

voltage drop varies only moderately between 25oC and

150oC. The diode used in anti-parallel with the IGBT is the

RHRP3060.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential.

Formerly developmental type TA49016.

Ordering Information

PART NUMBER

PACKAGE

BRAND

HGTG20N60B3D

TO-247

G20N60B3D

NOTE: When ordering, use the entire part number.

Symbol

Features

â¢ 40A, 600V at TC = 25oC

â¢ Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC

â¢ Short Circuit Rated

â¢ Low Conduction Loss

â¢ Hyperfast Anti-Parallel Diode

Packaging

JEDEC STYLE TO-247

COLLECTOR

(BOTTOM SIDE METAL)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,417,385

4,605,948

4,430,792

4,620,211

4,443,931

4,631,564

4,466,176

4,639,754

4,516,143

4,639,762

4,532,534

4,641,162

4,587,713

4,644,637

4,682,195

4,803,533

4,888,627

4,684,413

4,809,045

4,890,143

4,694,313

4,809,047

4,901,127

4,717,679

4,810,665

4,904,609

4,743,952

4,823,176

4,933,740

4,783,690

4,837,606

4,963,951

4,794,432

4,860,080

4,969,027

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

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