HGTG20N50C1D Datasheet, PDF (1/5 Pages) Intersil Corporation – 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode

HGTG20N50C1D
April 1995
20A, 500V N-Channel IGBT
with Anti-Parallel Ultrafast Diode
Features
Package
• 20A, 500V
• Latch Free Operation
• Typical Fall Time < 500ns
• High Input Impedance
• Low Conduction Loss
• With Anti-Parallel Diode
• t_RR < 60ns
COLLECTOR
(BOTTOM SIDE
METAL)
JEDEC STYLE TO-247
EMITTER
COLLECTOR
GATE
Description
The IGBT is a MOS gated high voltage switching device Terminal Diagram
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
C
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25^oC and +150^oC. The diode used in
parallel with the IGBT is an ultrafast (t_RR < 60ns) with soft
G
recovery characteristic.
IGBTs are ideal for many high voltage switching applications
E
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contractors.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTG20N50C1D TO-247
G20N50C1D
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES
Collector-Gate Voltage R_GE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CGR
Collector Current Continuous at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C25
at T_C = +90^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES
Diode Forward Current at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_F25
at T_C = +90^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_F90
Power Dissipation Total at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Power Dissipation Derating T_C > +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
NOTE: 1. T_J = +150^oC, Minimum R_GE = 25Ω without latch
HGTG20N50C1D
500
500
26
20
35
±20
26
20
75
0.8
-55 to +150
260
UNITS
V
V
A
A
A
V
A
A
W
W/^oC
o_C
o_C
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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3-71
File Number 2796.3