HGTG20N120E2 Datasheet, PDF (1/5 Pages) Intersil Corporation – 34A, 1200V N-Channel IGBT

Semiconductor
HGTG20N120E2
April 1995
34A, 1200V N-Channel IGBT
Features
• 34A, 1200V
• Latch Free Operation
• Typical Fall Time - 780ns
• High Input Impedance
• Low Conduction Loss
Description
The HGTG20N120E2 is a MOS gated, high voltage switch-
ing device combining the best features of MOSFETs and
bipolar transistors. The device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The much lower on-state voltage drop
varies only moderately between +25^oC and +150^oC.
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
The development type number for this device is TA49009.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
HGTG20N120E2 TO-247
BRAND
G20N120E2
Package
JEDEC STYLE TO-247
COLLECTOR
(BOTTOM SIDE
METAL)
EMITTER
COLLECTOR
GATE
Terminal Diagram
C
G
E
Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specified
Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES
Collector-Gate Breakdown Voltage R_GE = 1MΩ. . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CGR
Collector Current Continuous
At T_C = +25^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25
At T_C = +90^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM
Switching SOA at T_C = +150^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Power Dissipation Derating T_C > +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
(0.125" from case for 5 seconds)
Short Circuit Withstand Time (Note 2)
At V_GE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC
At V_GE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t_SC
NOTES:
HGTG20N120E2
1200
1200
34
20
100
±20
±30
100A at 0.8 BV_CES
150
1.20
-55 to +150
260
3
15
UNITS
V
V
A
A
A
V
V
-
W
W/^oC
o_C
o_C
µs
µs
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V_CE(PEAK) = 720V, T_C = +125^oC, R_GE = 25Ω
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1995
3-98
File Number 3370.2