HGTG20N120C3D Datasheet, PDF (1/8 Pages) Intersil Corporation – 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Data Sheet
HGTG20N120C3D
October 1998 File Number 4508.1
45A, 1200V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG20N120C3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25^oC and 150^oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
The diode used in anti-parallel with the IGBT was formerly
developmental type TA49155.
The IGBT diode combination was formerly developmental
type TA49264.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG20N120C3D
TO-247
20N120C3D
NOTE: When ordering, use the entire part number.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY
ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,466,176
4,587,713
4,620,211
4,641,162
4,694,313
4,794,432
4,809,047
4,860,080
4,901,127
4,969,027
4,417,385
4,516,143
4,598,461
4,631,564
4,644,637
4,717,679
4,801,986
4,810,665
4,883,767
4,904,609
4,430,792
4,532,534
4,605,948
4,639,754
4,682,195
4,743,952
4,803,533
4,823,176
4,888,627
4,933,740
4,443,931
4,567,641
4,618,872
4,639,762
4,684,413
4,783,690
4,809,045
4,837,606
4,890,143
4,963,951
Features
• 45A, 1200V, T_C = 25^oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 300ns at T_J = 150^oC
• Short Circuit Rating
• Low Conduction Loss
Symbol
C
G
E
Packaging
JEDEC STYLE TO-247
E
C
G
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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