HGTG12N60D1D Datasheet, PDF (1/6 Pages) Intersil Corporation – 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode

HGTG12N60D1D
April 1995
12A, 600V N-Channel IGBT
with Anti-Parallel Ultrafast Diode
Features
Package
• 12A, 600V
• Latch Free Operation
• Typical Fall Time <500ns
• Low Conduction Loss
• With Anti-Parallel Diode
• t_RR < 60ns
Description
COLLECTOR
(BOTTOM SIDE
METAL)
JEDEC STYLE TO-247
EMITTER
COLLECTOR
GATE
The IGBT is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25^oC and +150^oC. The diode used in
parallel with the IGBT is an ultrafast (t_RR < 60ns) with soft
recovery characteristic.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
The IGBTs are ideal for many high voltage switching applica-
tions operating at frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTG12N60D1D TO-220AB
G12N60D1D
NOTE: When ordering, use the entire part number
G
E
Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES
Collector-Gate Voltage R_GE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CGR
Collector Current Continuous at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C25
at T_C = +90^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_C90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES
Switching Safe Operating Area at T_J = +150^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Diode Forward Current at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_F25
at T_C = +90^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_F90
Power Dissipation Total at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Power Dissipation Derating T_C > +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
(0.125 inches from case for 5s)
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
HGTG12N60D1D
600
600
21
12
48
±20
30A at 0.8 BV_CES
21
12
75
0.6
-55 to +150
260
UNITS
V
V
A
A
A
V
-
A
A
W
W/^oC
o_C
o_C
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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3-46
File Number 2800.4