HGTD8P50G1 Datasheet, PDF (1/9 Pages) Intersil Corporation – 8A, 500V P-Channel IGBTs

HGTD8P50G1,
HGTD8P50G1S
March 1997
8A, 500V P-Channel IGBTs
Features
• 8A, 500V
• 3.7V V_CE(SAT)
• Typical Fall Time - 1800ns
• High Input Impedance
• T_J = +150^oC
Description
The HGTD8P50G1 and the HGTD8P50G1S are P-channel
enhancement-mode insulated gate bipolar transistors (IGBTs)
designed for high voltage, low on-dissipation applications such
as switching regulators and motor drives. This P- channel IGBT
can be paired with N-Channel IGBTs to form a complementary
power switch and it is ideal for half bridge circuit configurations.
These types can be operated directly from low power integrated
circuits.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTD8P50G1
TO-251AA
G8P50G
HGTD8P50G1S
TO-252AA
G8P50G
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in the tape and reel, i.e.,
HGTD8P50G1S9A.
The development type number for these devices is TA49015.
Package
JEDEC TO-251AA
EMITTER
COLLECTOR
GATE
(FLANGE)
COLLECTOR
JEDEC TO-252AA
GATE
EMITTER
(FLANGE)
COLLECTOR
Symbol
C
G
E
Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specified
Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_CES
Emitter-Collector Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV_ECS
Collector Current Continuous
At T_C = +25^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C25
At T_C = +90^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_C90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM
Switching SOA at T_C = +25^oC, V_CL = -350V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
No Snubber, Figure 17 - Circuit 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
With 0.1µF Capacitor, Figure 17 - Circuit 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation Total at T_C = +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Power Dissipation Derating T_C > +25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
(0.125" from case for 5s)
NOTE:
1. T_J = 25^oC, V_CL = 350V, R_GE = 25Ω, Figure 17 - Circuit 2 (C₁ = 0.1µF)
HGTD8P50G1/G1S
-500
10
-12
-8
-18
±20
±30
-3
-18
66
0.53
-40 to +150
+260
UNITS
V
V
A
A
A
V
V
A
A
W
W/^oC
o_C
o_C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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