HGTD7N60C3S Datasheet, PDF (1/7 Pages) Intersil Corporation – 14A, 600V, UFS Series N-Channel IGBTs

Data Sheet
HGTD7N60C3S, HGTP7N60C3
January 2000 File Number 4141.3
14A, 600V, UFS Series N-Channel IGBTs
The HGTD7N60C3S and HGTP7N60C3 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25^oC
and 150^oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49115.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTD7N60C3S
TO-252AA
G7N60C
HGTP7N60C3
TO-220AB
G7N60C3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e.
HGTD7N60C3S9A.
Symbol
C
Features
• 14A, 600V at T_C = 25^oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T_J = 150^oC
• Short Circuit Rating
• Low Conduction Loss
Packaging
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR (FLANGE)
JEDEC TO-252AA
GATE
EMITTER
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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