FSPYE234R Datasheet, PDF (1/8 Pages) Intersil Corporation – Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

TM
Data Sheet
FSPYE234R, FSPYE234F
June 2000
File Number 4873
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Intersil Star*Power Rad Hard
MOSFETs have been specifically
developed for high performance
applications in a commercial or
military space environment.
Star*Power MOSFETs offer the system designer both
extremely low r_DS(ON) and Gate Charge allowing the
development of low loss Power Subsystems. Star*Power
FETs combine this electrical capability with total dose
radiation hardness up to 300K RADs while maintaining the
guaranteed performance for Single Event Effects (SEE)
which the Intersil FS families have always featured.
The Intersil portfolio of Star*Power FETs includes a family of
devices in various voltage, current and package styles. The
Star*Power family consists of Star*Power and Star*Power
Gold products. Star*Power FETs are optimized for total dose
and r_DS(ON) performance while exhibiting SEE capability at
full rated voltage up to an LET of 37. Star*Power Gold FETs
have been optimized for SEE and Gate Charge providing
SEE performance to 80% of the rated voltage for an LET of
82 with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either TXV or Space
equivalent of MIL-S-19500.
Formerly available as type TA45216W.
Ordering Information
RAD LEVEL
10K
100K
100K
300K
300K
SCREENING LEVEL PART NUMBER/BRAND
Engineering samples FSPYE234D1
TXV
FSPYE234R3
Space
FSPYE234R4
TXV
FSPYE234F3
Space
FSPYE234F4
Features
• 9A, 250V, r_DS(ON) = 0.215Ω
• UIS Rated
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Rated to 300K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm² with
V_DS up to 100% of Rated Breakdown and
V_GS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV_DSS
- Typically Survives 2E12 if Current Limited to I_AS
• Photo Current
- 4.0nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm²
- Usable to 1E14 Neutrons/cm²
Symbol
D
Packaging
G
S
SMD.5
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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