FSL130D Datasheet, PDF (1/8 Pages) Intersil Corporation – 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

FSL130D, FSL130R
June 1998
8A, 100V, 0.230 Ohm, Rad Hard,
SEGR Resistant, N-Channel Power MOSFETs
Features
• 8A, 100V, r_DS(ON) = 0.230Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm² with
V_DS up to 80% of Rated Breakdown and
V_GS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV_DSS
- Typically Survives 2E12 if Current Limited to I_DM
• Photo Current
- 1.5nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm²
- Usable to 3E14 Neutrons/cm²
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K
Commercial
FSL130D1
10K
TXV
FSL130D3
100K
100K
Commercial
TXV
FSL130R1
FSL130R3
100K
Space
FSL130R4
Description
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Symbol
D
G
Formerly available as type TA17636.
S
Package
TO-205AF
G
DS
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-29
File Number 4031.3