CA3141 Datasheet, PDF (1/4 Pages) Intersil Corporation – High-Voltage Diode Array For Commercial, Industrial and Military Applications

CA3141 _January
Semiconductor
1999
NO
Call
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Commercial,
Applications
Features
Description
• Matched Monolithic Construction
- V_F Match (Each Diode Pair) . . . . 0.55mV At I_F = 1mA
• Low Diode Capacitance. . . . . . . 0.3pF (Typ) at V_R = 2V
• High Diode-to-Substrate Breakdown. . . . . . . . . 30V (Min)
• Low Reverse (Leakage) Current . . . . . . . 100nA (Max)
Applications
The CA3141E High Voltage Diode Array Consists of ten gen-
eral purpose high reverse breakdown diodes. Six diodes are
internally connected to form three common cathode diode
pairs, and the remaining four diodes are internally connected
to form two common anode diode pairs. Integrated circuit
construction assures excellent static and dynamic matching
of the diodes, making the CA3141 extremely useful for a
wide variety of applications in communications and switching
systems.
• Balanced Modulators or Demodulators
• Analog Switches
• High-Voltage Diode Gates
• Current Ratio Detectors
Part Number Information
TEMP.
PART NUMBER RANGE (^oC)
PACKAGE
CA3141E
-55 to 125 16 Ld PDIP
PKG.
NO.
E16.3
Pinout
CA3141
(PDIP)
TOP VIEW
1
D₁ D_{10 16}
2
15
D₂ D₉
3
14
4
D₃ D₇
13
5
12
D₄ D₈
6
11
7
D₅ D_{6 10}
8
9
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright © Harris Corporation 1999
1
File Number 906.4